inchange semiconductor isc product specification isc silicon npn darlington power transistor MJ10003 description collector-emitter sustaining voltage- : v ceo(sus) = 400v (min.) high switching speed applications designed for high voltage, high speed , power switching in inductive circuits where fall time is critical. they are partic- ularly suited for line operated switch-mode applications as: switching regulators inverters solenoid and relay drivers motor controls deflection circuits absolute maximum ratings (t a =25 ) symbol parameter value unit v ceo(sus) collector-emitter voltage 400 v v cex(sus) collector-emitter voltage 450 v v cev collector-emitter voltage 500 v v ebo emitter-base voltage 8 v i c collector current-continunous 10 a i cm collector current-peak 20 a i b b base current-continunous 2.5 a p c collector power dissipation @t c =25 150 w t j junction temperature 200 t stg storage temperature range -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.17 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor MJ10003 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.25a; i b = 0 350 v v ce (sat)-1 collector-emitter saturation voltage i c = 5a; i b = 0.25a b i c = 5a; i b = 0.25a, t b c = 100 1.9 2.0 v v ce (sat)-2 collector-emitter saturation voltage i c = 10a; i b = 1a 2.9 v v be (sat) base-emitter saturation voltage i c = 5a; i b = 0.25a b i c = 5a; i b = 0.25a, t b c = 100 2.5 2.5 v i cev collector cutoff current v ce =500v;v be( off ) =1.5v v ce =500v;v be( off ) =1.5v;t c =100 0.25 5.0 ma i cer collector cutoff current v ce =500v; r be = 50 ; t c = 100 5.0 ma i ebo emitter cutoff current v eb = 8v; i c = 0 175 ma h fe-1 dc current gain i c = 2.5a, v ce = 5v 40 500 h fe-2 dc current gain i c = 5a, v ce = 5v 30 300 v ecf c-e diode forward voltage i f = 5a 5.0 v c ob output capacitance i e = 0, v cb = 10v; f= 0.1mhz 60 pf switching times; resistive load t d delay time 0.2 s t r rise time 0.6 s t s storage time 3.0 s t f fall time v cc = 250v; i c = 5a; i b1 = 0.25a v be( off ) = 5v t p = 50 s, duty cycle 2% 1.5 s isc website www.iscsemi.cn
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